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Manufacturer Part Number: IRFB4332PBF Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET MOSFT 250V 60A 33mOhm 99nC Qg Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
100% original and authentic
100% test report if single part is over 500USD
100% damaged replacement guaranteed

Product parameters


Manufacturer Infineon
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 250 V
Id – Continuous Drain Current 60 A
Rds On – Drain-Source Resistance 33 mOhms
Vgs – Gate-Source Voltage – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage 1.8 V
Qg – Gate Charge 99 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 390 W
Channel Mode Enhancement
Packaging Tube
Brand Infineon Technologies
Configuration Single
Forward Transconductance – Min 100 S
Height 15.65 mm
Length 10 mm
Product Type MOSFET
Factory Pack Quantity 1000
Subcategory MOSFETs
Transistor Type 1 N-Channel
Width 4.4 mm
Unit Weight 0.068784 oz

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