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Manufacturer Part Number: IRFB4227PBF Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET MOSFT 200V 65A 26mOhm 70nC Qg Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
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Product parameters

Manufacturer Infineon
Technology Si
Mounting Style Through Hole
Package / Case TO-220-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 200 V
Id – Continuous Drain Current 65 A
Rds On – Drain-Source Resistance 24 mOhms
Vgs – Gate-Source Voltage – 30 V, + 30 V
Vgs th – Gate-Source Threshold Voltage 1.8 V
Qg – Gate Charge 70 nC
Minimum Operating Temperature – 40 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 330 W
Channel Mode Enhancement
Packaging Tube
Brand Infineon Technologies
Configuration Single
Fall Time 31 ns
Forward Transconductance – Min 49 S
Height 15.65 mm
Length 10 mm
Product Type MOSFET
Rise Time 20 ns
Factory Pack Quantity 1000
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 33 ns
Width 4.4 mm
Unit Weight 0.068784 oz

IRFB4227PBF is the part number for a power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) developed by Infineon Technologies. It is a N-channel MOSFET designed for high power switching applications, such as motor control, power supplies, and inverters. The IRFB4227PBF power MOSFET is designed to handle high currents and voltages, providing efficient power switching with low on-resistance. It offers reliable performance in demanding applications where high power and fast switching are required.

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