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IPD80R1K0CE

Manufacturer Part Number: IPD80R1K0CE Manufacturer / Brand: Infineon Technologies
Part of Description: MOSFET N-Ch 800V 5.7A DPAK-2 Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Ship From: HK/Shen Zhen Shipment Way: DHL/Fedex/TNT/UPS
Datasheets:
100% original and authentic
100% test report if single part is over 500USD
100% damaged replacement guaranteed

Product parameters

 

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case TO-252-3
Transistor Polarity N-Channel
Number of Channels 1 Channel
Vds – Drain-Source Breakdown Voltage 800 V
Id – Continuous Drain Current 5.7 A
Rds On – Drain-Source Resistance 800 mOhms
Vgs – Gate-Source Voltage – 20 V, + 20 V
Vgs th – Gate-Source Threshold Voltage 2.1 V
Qg – Gate Charge 31 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 150 C
Pd – Power Dissipation 83 W
Channel Mode Enhancement
Tradename CoolMOS
Series CoolMOS CE
Packaging MouseReel
Brand Infineon Technologies
Configuration Single
Fall Time 8 ns
Height 2.3 mm
Length 6.5 mm
Product Type MOSFET
Rise Time 15 ns
Factory Pack Quantity 2500
Subcategory MOSFETs
Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 72 ns
Typical Turn-On Delay Time 25 ns
Width 6.22 mm
Unit Weight 0.011640 oz
Lifecycle ,
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