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Manufacturer Part Number: IPG20N10S4L-22 Manufacturer / Brand: Infineon
Part of Description: MOSFET MOSFET Lead Free Status / RoHS Status: table_img Lead free / RoHS Compliant
Shipment Way: DHL/Fedex/TNT/UPS Datasheets:
100% original and authentic
100% test report if single part is over 500USD
100% damaged replacement guaranteed

Product parameters

Manufacturer Infineon
Technology Si
Mounting Style SMD/SMT
Package / Case TDSON-8
Transistor Polarity N-Channel
Number of Channels 2 Channel
Vds – Drain-Source Breakdown Voltage 100 V
Id – Continuous Drain Current 20 A
Rds On – Drain-Source Resistance 20 mOhms, 20 mOhms
Vgs – Gate-Source Voltage – 16 V, + 16 V
Vgs th – Gate-Source Threshold Voltage 1.1 V
Qg – Gate Charge 27 nC
Minimum Operating Temperature – 55 C
Maximum Operating Temperature + 175 C
Pd – Power Dissipation 60 W
Channel Mode Enhancement
Qualification AEC-Q101
Series XPG20N10
Packaging Reel
Configuration Dual
Fall Time 18 ns, 18 ns
Height 1.27 mm
Length 5.9 mm
Product Type MOSFET
Rise Time 3 ns, 3 ns
Factory Pack Quantity 5000
Subcategory MOSFETs
Transistor Type 2 N-Channel
Typical Turn-Off Delay Time 30 ns, 30 ns
Typical Turn-On Delay Time 5 ns, 5ns
Width 5.15 mm
Part # Aliases SP000866570 IPG2N1S4L22XT IPG20N10S4L22ATMA1
Unit Weight 0.003445 oz

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