IPD30N03S4L14ATMA1

Infineon Technologies IPD30N03S4L14ATMA1 is an N-Channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various electronic applications. Operating with a voltage rating of 30 volts, a maximum continuous drain current (Tc) of 30 amperes, and a power dissipation of 31 watts (Tc), this MOSFET is suitable for surface-mount applications. It comes in the PG-TO252-3-11 package, providing a convenient and efficient form factor for electronic circuit integration.